Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Package / Case:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
Supplier Device Package:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description MOQ Stock Action
IV1Q12160T4 Inventchip Technology
SIC MOSFET, 1200V 16...
1
106
In-stock
Get Quote
IV1Q12050T3 Inventchip Technology
SIC MOSFET, 1200V 50...
1
54
In-stock
Get Quote
IV1Q12050T4 Inventchip Technology
SIC MOSFET, 1200V 50...
1
35,000
In-stock
Get Quote
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