- Current - Continuous Drain (Id) @ 25°C：
-
- Drain to Source Voltage (Vdss)：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Vgs(th) (Max) @ Id：
-
13 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
STMicroelectronics | TRANS SJT N-CH 1200... |
1 |
147
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SICFET N-CH 650V 95A... |
1 |
705
In-stock
|
Get Quote | ||
|
STMicroelectronics | SILICON CARBIDE ... |
1 |
1
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SICFET N-CH 650V 90A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SICFET N-CH 650V 90A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SICFET N-CH 650V 100... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SICFET N-CH 650V 33A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SICFET N-CH 1200V 33... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SILICON CARBIDE ... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SILICON CARBIDE ... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SILICON CARBIDE ... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | SILICON CARBIDE ... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | PTD WBG & POWER RF |
1,000 |
35,000
In-stock
|
Get Quote |
