Current - Continuous Drain (Id) @ 25°C:
FET Feature:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Package / Case:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
Supplier Device Package:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description MOQ Stock Action
IMZ120R045M1XKSA1 Infineon Technologies
SICFET N-CH 1200V 52...
1
35,000
In-stock
Get Quote
IMW120R045M1XKSA1 Infineon Technologies
SICFET N-CH 1.2KV 5...
1
35,000
In-stock
Get Quote
AIMW120R080M1XKSA1 Infineon Technologies
1200V COOLSIC MOSF...
1
35,000
In-stock
Get Quote
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