- Manufacturer：
-
- onsemi (2)
- Rectron USA (1)
- Drain to Source Voltage (Vdss)：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
- FET Feature：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Vgs(th) (Max) @ Id：
-
14 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 200V 660... |
1 |
8,906
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET P-CH 20V 660M... |
1 |
7,308
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET P-CH 20V 660M... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 200V 660... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 200V 660... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Rectron USA | MOSFET P-CH 20V 660M... |
80,000 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | SMALL-SIGNAL N-CH... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Micro Commercial Components (MCC) | MOSFET P-CH 20V 660M... |
10,000 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 200V 660... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 200V 660... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 200V 660... |
451 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 200V 660... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 200V 660... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 200V 660... |
1 |
35,000
In-stock
|
Get Quote |
