- Drive Voltage (Max Rds On, Min Rds On)：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Vgs (Max)：
-
- Vgs(th) (Max) @ Id：
-
9 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 60A... |
1 |
9,688
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | G3 1200V SIC-MOSFET... |
1 |
170
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 60A... |
1 |
1,254
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 60A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 20V 60A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N CH 100V 60A... |
1 |
14,900
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N CH 120V 60A... |
1 |
46
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 80V 60A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
5,000 |
35,000
In-stock
|
Get Quote |
