- Drive Voltage (Max Rds On, Min Rds On):
-
- FET Type:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
- Mounting Type:
-
- Operating Temperature:
-
- Package / Case:
-
- Power Dissipation (Max):
-
- Product Status:
-
- Rds On (Max) @ Id, Vgs:
-
- Supplier Device Package:
-
30 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Diodes Incorporated | MOSFET N-CH 30V 5.6A... |
1 |
19,524
In-stock
|
Get Quote | |||
PANJIT | SOT-23, MOSFET |
1 |
78,341
In-stock
|
Get Quote | |||
Vishay | MOSFET N-CH 60V 5.6A... |
1 |
1,598
In-stock
|
Get Quote | |||
YANGJIE | SOT-23 P 20V 5.6A Tran... |
3,000 |
15,000
In-stock
|
Get Quote | |||
YANGJIE | N-CH MOSFET 30V 5.6A... |
1 |
1,150
In-stock
|
Get Quote | |||
YANGJIE | P-CH MOSFET 20V 5.6A... |
1 |
2,890
In-stock
|
Get Quote | |||
Diodes Incorporated | MOSFET P-CH 30V 5.6A... |
1 |
691
In-stock
|
Get Quote | |||
PANJIT | SOT-23, MOSFET |
1 |
441
In-stock
|
Get Quote | |||
Infineon Technologies | MOSFET P-CH 20V 5.6A... |
1 |
805
In-stock
|
Get Quote | |||
Vishay | MOSFET N-CH 60V 5.6A... |
1 |
5,776
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 250V 5.6... |
1 |
35,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 250V 5.6... |
1 |
35,000
In-stock
|
Get Quote | |||
PANJIT | SOT-23, MOSFET |
1 |
35,000
In-stock
|
Get Quote | |||
YANGJIE | N-CH MOSFET 30V 5.6A... |
1 |
35,000
In-stock
|
Get Quote | |||
YANGJIE | P-CH MOSFET 15V 5.6A... |
1 |
35,000
In-stock
|
Get Quote | |||
Diotec Semiconductor | MOSFET 30V 5.6A N 1.2... |
1 |
3,000
In-stock
|
Get Quote | |||
Diotec Semiconductor | MOSFET 30V 5.6A N 1.2... |
1 |
3,000
In-stock
|
Get Quote | |||
Infineon Technologies | MOSFET N-CH 30V 5.6A... |
1 |
35,000
In-stock
|
Get Quote | |||
Infineon Technologies | MOSFET P-CH 20V 5.6A... |
1 |
35,000
In-stock
|
Get Quote | |||
onsemi | MOSFET P-CH 20V 5.6A... |
1 |
35,000
In-stock
|
Get Quote |