Transistors - FETs, MOSFETs - Single - IC-FPGACHIP

Drain to Source Voltage (Vdss)：

Drive Voltage (Max Rds On, Min Rds On)：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Operating Temperature：

Package / Case：

Power Dissipation (Max)：

Rds On (Max) @ Id, Vgs：

Supplier Device Package：

Technology：

Vgs (Max)：

Vgs(th) (Max) @ Id：

Filter：

2 Records

Image	Part	Manufacturer	Description	MOQ		Stock	Action
	TW083N65C,S1F	Toshiba Electronic Devices and Storage Corporation	G3 650V SIC-MOSFET ...	1	PDF	175 In-stock	Get Quote
	TK30A06N1,S4X	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 30A...	1	PDF	261 In-stock	Get Quote

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