- Manufacturer：
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- Current - Continuous Drain (Id) @ 25°C：
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- Drain to Source Voltage (Vdss)：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Operating Temperature：
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- Package / Case：
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- Power Dissipation (Max)：
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- Product Status：
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- Rds On (Max) @ Id, Vgs：
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- Supplier Device Package：
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- Technology：
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- Vgs (Max)：
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6 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 900V 9A... |
1 |
3,879
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | SICFET N-CH 1700V 3.... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 900V 9A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
ROHM Semiconductor | 1200V, 10A, THD, SILI... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | 1200V, 10A, THD, SILI... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | SICFET N-CH 1200V 10... |
1 |
35,000
In-stock
|
Get Quote |
