Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C：

Drain to Source Voltage (Vdss)：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Power Dissipation (Max)：

Rds On (Max) @ Id, Vgs：

Filter：

2 Records

Image	Part	Manufacturer	Description	MOQ		Stock	Action
	TK1K9A60F,S4X	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 3.7...	1	PDF	35,000 In-stock	Get Quote
	TK4A80E,S4X	Toshiba Electronic Devices and Storage Corporation	PB-FPOWERMOSFETT...	50	PDF	35,000 In-stock	Get Quote

1 / 1 Page, 2 Records