- Manufacturer：
-
- onsemi (2)
- Current - Continuous Drain (Id) @ 25°C：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
17 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 600V 18A... |
1 |
2,623
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 18A... |
1 |
1,298
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CHANNEL... |
1 |
2,500
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CHANNEL... |
1 |
550
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 18A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 60V 45A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 18A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 19A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CHANNEL... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 18A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 18A... |
2,500 |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 800V 6.5... |
50 |
35,000
In-stock
|
Get Quote | ||
|
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
50 |
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 40V 52A... |
1,500 |
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 40V 52A... |
1,500 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 18A... |
121 |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | IPA60R180P7XKSA1 - 60... |
1 |
35,000
In-stock
|
Get Quote |
