Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
FET Feature:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Product Status:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description MOQ Stock Action
TK100L60W,VQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 100...
1
8
In-stock
Get Quote
NDTL03N150CG onsemi
MOSFET N-CH 1500V 2....
1
35,000
In-stock
Get Quote
NDUL03N150CG onsemi
MOSFET N-CH 1500V 2....
1
35,000
In-stock
Get Quote
2SK3132(Q) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 500V 50A...
1
35,000
In-stock
Get Quote
NDUL03N150CG onsemi
N-CHANNEL POWER M...
1
35,000
In-stock
Get Quote
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