- Current - Continuous Drain (Id) @ 25°C：
-
- Drain to Source Voltage (Vdss)：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
3 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 1000V 4A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 6A... |
1 |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 10A... |
1 |
35,000
In-stock
|
Get Quote |
