Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C：

Drain to Source Voltage (Vdss)：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Power Dissipation (Max)：

Rds On (Max) @ Id, Vgs：

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3 Records

Part	Manufacturer	Description	MOQ		Stock	Action
TK55D10J1(Q)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 100V 55A...	1	PDF	35,000 In-stock	Get Quote
TK60D08J1(Q)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 75V 60A...	1	PDF	35,000 In-stock	Get Quote
TK70D06J1(Q)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 70A...	1	PDF	35,000 In-stock	Get Quote

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