Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Product Status:
Supplier Device Package:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description MOQ Stock Action
TK1K7A60F,S4X Toshiba Electronic Devices and Storage Corporation
X35 PB-F POWER MOS...
1
3
In-stock
Get Quote
TK4P60D,RQ Toshiba Electronic Devices and Storage Corporation
PB-F POWER MOSFET...
2,000
35,000
In-stock
Get Quote
TK4A60D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 4A...
1
35,000
In-stock
Get Quote
TK4A53D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 525V 4A...
1
35,000
In-stock
Get Quote
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