Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Supplier Device Package:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description MOQ Stock Action
SI2338DS-T1-GE3 Vishay
MOSFET N-CH 30V 6A ...
1
35,000
In-stock
Get Quote
TK11S10N1L,LXHQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 100V 11A...
1
35,000
In-stock
Get Quote
SI2338DS-T1-BE3 Vishay
N-CHANNEL 30-V (D-S...
1
35,000
In-stock
Get Quote
TK11S10N1L,LQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 100V 11A...
2,000
35,000
In-stock
Get Quote
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