Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Drive Voltage (Max Rds On, Min Rds On):
FET Feature:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Supplier Device Package:
Vgs (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description MOQ Stock Action
TK100L60W,VQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 100...
1
8
In-stock
Get Quote
APT20M18B2VRG Microchip Technology
MOSFET N-CH 200V 100...
30
35,000
In-stock
Get Quote
APT20M18LVRG Microchip Technology
MOSFET N-CH 200V 100...
25
35,000
In-stock
Get Quote
APT20M18B2VFRG Microchip Technology
MOSFET N-CH 200V 100...
20
35,000
In-stock
Get Quote
APT20M18LVFRG Microchip Technology
MOSFET N-CH 200V 100...
20
35,000
In-stock
Get Quote
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