Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Supplier Device Package:
Vgs (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description MOQ Stock Action
SSM3J353F,LF Toshiba Electronic Devices and Storage Corporation
MOSFET P-CH 30V 2A ...
1
12,771
In-stock
Get Quote
SSM3K337R,LF Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 38V 2A ...
1
382
In-stock
Get Quote
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